s mhop microelectronics c orp. a STM101N symbolv ds v gs i dm e as 44 w a p d c 2.8 -55 to 150 i d units parameter 100 3 15 c/w vv 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics 2.3 mj features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. n-channel enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver1.0 www.samhop.com.tw oct,08,2010 1 details are subject to change without notice. s o-8 1 a t a =25 c t a =70 c a w 2.4 t a =70 c 1.8 green product product summary v dss i d r ds(on) (m ) typ 100v 3a 260 @ vgs=4.5v 170 @ vgs=10v
STM101N ver1.0 www.samhop.com.tw oct,08,2010 2 symbol min typ max units bv dss 100 v 1 i gss 100 na v gs(th) 1 v 170 g fs 5.5 s v sd c iss 310 pf c oss 35 pf c rss 20 pf q g 8 nc 9 nc q gs 16.5 nc q gd 3.5 t d(on) 5.5 ns t r 1 ns t d(off) 2 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =50v i d =1a v gs =10v r gen =6 ohm total gate charge rise time turn-off delay time v ds =50v,i d =1.5a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =1.5a v ds =10v , i d =1.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =80v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =1a 260 m ohm c f=1.0mhz c v ds =50v,i d =1.5a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1a 0.785 1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd =50v,v gs =10v.(see figure13) _ _ _ 1.8 210 350
STM101N ver1.0 www.samhop.com.tw oct,08,2010 3 t j ( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 10 8 6 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10v 10 8 6 4 2 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 360 300 240 180 120 60 1 2.0 1.8 1.6 1.4 1.2 1.0 0 100 75 25 50 125 150 v g s =10v i d =1.5a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v g s i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 2 v g s =10v v gs =3v v gs =4v v gs =5v v gs =6v 1 2 4 6 8 10 0
STM101N ver 1.0 www.samhop.com.tw oct,08,2010 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 1 10 100 0.1 1 10 100 vds=50v,id=1a vgs=10v td(on) tr td(off ) tf 600 500 400 300 200 100 0 2 4 6 8 10 0 125 c 75 c 25 c i d =1.5a 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 125 c 75 c ciss coss crss 420 350 280 210 140 70 0 10 15 20 25 30 0 5 40 35 45 50 10 86 4 2 0 0 1 2 3 4 5 6 7 8 v ds =50v i d =1.5a 0.1 1 10 100 100 10 1 0.01 r d s (o n) l im i t v gs =10v single pulse t a =25 c 0.1 1s 100 ms 1 m s 1 00us dc
t p v ( br )d ss i a s f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve ver1.0 www.samhop.com.tw oct,08,2010 5 0.001 0.01 0.1 1 0.0000 1 0.000 1 0.001 0.01 0. 1 1 10 100 1000 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve STM101N r g i a s 0.0 1 t p d .u .t l v d s + - d d 20v v
STM101N ver1.0 www.samhop.com.tw oct,08,2010 6 package outline dimensions so-8 symbols min min 0.004 0.189 0 1.35 0.10 1.25 0.17 4.80 3.70 0 max max 0.069 0.010 0.064 0.010 0.197 0.157 8 1.750.25 1.63 0.25 5.00 4.00 8 millimeters inches 1 e d a a1 b e h l h x 45 o a a1 a2 c de e h l h 1.27 ref. 5.80 6.20 0.40 1.27 0.25 0.50 0.050 bsc 0.228 0.244 0.010 a2 c b 0.020 0.31 0.51 0.053 0.049 0.012 0.007 0.146 0.016 0.050 0.020
STM101N www.samhop.com.tw oct,08,2010 7 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 ver1.0
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